| PART |
Description |
Maker |
| KSE45H8J69Z |
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
TRIAC|700V V(DRM)|10A I(T)RMS|TO-220
Transient Voltage Suppressor Diodes 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|20
|
Volex PLC
|
| STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC8 |
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| BCR8UM BCR8UM-12 |
600 V, 8 A, TRIAC, TO-220 TO-220, 3 PIN
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 中功率使用绝缘型，玻璃钝化型
|
Central Semiconductor, Corp.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRF730 3009 |
N-Channel 400V-0.75惟-5.5A - TO-220 PowerMESHTM MOSFET(N娌?????MOSFET)
N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET
From old datasheet system
N - CHANNEL 400V - 0.75 - 5.5A - TO-220 PowerMESH TM MOSFET
N-Channel 400V-0.75Ω-5.5A - TO-220 PowerMESHTM MOSFET(N沟道功率MOSFET) N沟道400V -0.75Ω- 5.5A -20 PowerMESHTM MOSFET的（不适用沟道功率MOSFET的）
|
??????浣?
意法半导
STMicroelectronics N.V.
|
| NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 N |
Power MOSFET 60 Amps, 60 Volts
60 V, 60 A, N-Channel TO-220 and D2PAK
60 V, 60 A, N−Channel TO−220 and D2PAK
60 V / 60 A / N&Channel TO&220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STP8NS25FP STP8NS25 |
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STP16NE06 STP16NE06FP 5315 P16NE |
11 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel 60V-0.08Ω-16A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V0.08Ω- 16A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
N-CHANNEL Power MOSFET
From old datasheet system
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP STripFET? POWER MOSFET
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STP8NC60 STP8NC60FP |
N - CHANNEL POWER MOSFET
N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh⑩II MOSFET N沟道600V 0.85ohm -A TO-220/TO-220FP PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh?II MOSFET
N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
